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Artigo de periodico
Influence of minority carrier transport in the optical properties of double barrier diodes (2006)
Camps, I.; Vercik, Andrés; Santos, L. F. dos; Gobato, Y. G.
Source: Brazilian Journal of Physics. Unidade: FZEA
Subjects: ÓPTICA, DIODOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAMPS, I. et al. Influence of minority carrier transport in the optical properties of double barrier diodes. Brazilian Journal of Physics, v. 36, n. 2A, p. 343-346, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000300029. Acesso em: 17 out. 2024.
APA
Camps, I., Vercik, A., Santos, L. F. dos, & Gobato, Y. G. (2006). Influence of minority carrier transport in the optical properties of double barrier diodes. Brazilian Journal of Physics, 36( 2A), 343-346. doi:10.1590/s0103-97332006000300029
NLM
Camps I, Vercik A, Santos LF dos, Gobato YG. Influence of minority carrier transport in the optical properties of double barrier diodes [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 343-346.[citado 2024 out. 17 ] Available from: https://doi.org/10.1590/s0103-97332006000300029
Vancouver
Camps I, Vercik A, Santos LF dos, Gobato YG. Influence of minority carrier transport in the optical properties of double barrier diodes [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 343-346.[citado 2024 out. 17 ] Available from: https://doi.org/10.1590/s0103-97332006000300029
Artigo de periodico
Kinetics of excitonic complexes on tunneling devices (2005)
Vercik, Andrés; Galvão Gobato, Y.; Camps, I.; Marques, G. E.; Brasil, Maria J. S. P.; Makler, Susana S.
Source: Physical Review B. Unidade: FZEA
Subjects: FÍSICA, ÓPTICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERCIK, Andrés et al. Kinetics of excitonic complexes on tunneling devices. Physical Review B, v. 71, n. 7, p. 075310/1-075310/6, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.71.075310. Acesso em: 17 out. 2024.
APA
Vercik, A., Galvão Gobato, Y., Camps, I., Marques, G. E., Brasil, M. J. S. P., & Makler, S. S. (2005). Kinetics of excitonic complexes on tunneling devices. Physical Review B, 71( 7), 075310/1-075310/6. doi:10.1103/physrevb.71.075310
NLM
Vercik A, Galvão Gobato Y, Camps I, Marques GE, Brasil MJSP, Makler SS. Kinetics of excitonic complexes on tunneling devices [Internet]. Physical Review B. 2005 ; 71( 7): 075310/1-075310/6.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.71.075310
Vancouver
Vercik A, Galvão Gobato Y, Camps I, Marques GE, Brasil MJSP, Makler SS. Kinetics of excitonic complexes on tunneling devices [Internet]. Physical Review B. 2005 ; 71( 7): 075310/1-075310/6.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.71.075310
Artigo de periodico
Transport via excitonic complexes in resonant tunneling structures (2004)
Vercik, Andrés; Gobato, Y. G.; Brasil, M. J. S. P.
Source: Materials Science and Engineering B. Unidade: FZEA
Subjects: ÓPTICA, ESTRUTURA DOS MATERIAIS, SEMICONDUTORES, DIODOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERCIK, Andrés e GOBATO, Y. G. e BRASIL, M. J. S. P. Transport via excitonic complexes in resonant tunneling structures. Materials Science and Engineering B, v. 112, n. 2-3, p. 128-130, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.018. Acesso em: 17 out. 2024.
APA
Vercik, A., Gobato, Y. G., & Brasil, M. J. S. P. (2004). Transport via excitonic complexes in resonant tunneling structures. Materials Science and Engineering B, 112( 2-3), 128-130. doi:10.1016/j.mseb.2004.05.018
NLM
Vercik A, Gobato YG, Brasil MJSP. Transport via excitonic complexes in resonant tunneling structures [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 128-130.[citado 2024 out. 17 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.018
Vancouver
Vercik A, Gobato YG, Brasil MJSP. Transport via excitonic complexes in resonant tunneling structures [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 128-130.[citado 2024 out. 17 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.018
Artigo de periodico
Photocurrent and photoluminescence studies of resonant tunneling diodes (2004)
Santos, L. F.; Vercik, Andrés; Camps, I.; Gobato, Y. G.
Source: Materials Science and Engineering B. Unidade: FZEA
Subjects: ÓPTICA, ESTRUTURA DOS MATERIAIS, SEMICONDUTORES, DIODOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, L. F. et al. Photocurrent and photoluminescence studies of resonant tunneling diodes. Materials Science and Engineering B, v. 112, n. 2-3, p. 131-133, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.019. Acesso em: 17 out. 2024.
APA
Santos, L. F., Vercik, A., Camps, I., & Gobato, Y. G. (2004). Photocurrent and photoluminescence studies of resonant tunneling diodes. Materials Science and Engineering B, 112( 2-3), 131-133. doi:10.1016/j.mseb.2004.05.019
NLM
Santos LF, Vercik A, Camps I, Gobato YG. Photocurrent and photoluminescence studies of resonant tunneling diodes [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 131-133.[citado 2024 out. 17 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.019
Vancouver
Santos LF, Vercik A, Camps I, Gobato YG. Photocurrent and photoluminescence studies of resonant tunneling diodes [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 131-133.[citado 2024 out. 17 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.019

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