Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer (2004)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos 
; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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REIS, Ronaldo Willian et al. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 15 nov. 2025.APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2004). Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 15 ]Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 15 ]
