Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation (2003)
Der Agopian, Paula Ghedini 
; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronic technology and devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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DER AGOPIAN, Paula Ghedini e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation. Microelectronic technology and devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 15 nov. 2025.APA
Der Agopian, P. G., Pavanello, M. A., & Martino, J. A. (2003). Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation. In Microelectronic technology and devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Der Agopian PG, Pavanello MA, Martino JA. Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation. In: Microelectronic technology and devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 15 ]Vancouver
Der Agopian PG, Pavanello MA, Martino JA. Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation. In: Microelectronic technology and devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 15 ]
