ReP USP - Resultado da busca

Trabalho de evento
Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k (1995)
Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Pavanello, M. A., & Martino, J. A. (1995). Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Pavanello MA, Martino JA. Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Pavanello MA, Martino JA. Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge) (1995)
Braga, Nelson Liebentritt de Almeida; Zasnicoff, Luiz Sergio
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Braga, N. L. de A., & Zasnicoff, L. S. (1995). Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Braga NL de A, Zasnicoff LS. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Braga NL de A, Zasnicoff LS. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Reactively-sputtered tin formation using fr magnetron system (1995)
Osorio, S P A; Zasnicoff, Luiz Sergio
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
OSORIO, S P A e ZASNICOFF, Luiz Sergio. Reactively-sputtered tin formation using fr magnetron system. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Osorio, S. P. A., & Zasnicoff, L. S. (1995). Reactively-sputtered tin formation using fr magnetron system. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Osorio SPA, Zasnicoff LS. Reactively-sputtered tin formation using fr magnetron system. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Osorio SPA, Zasnicoff LS. Reactively-sputtered tin formation using fr magnetron system. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Development and characterization of 'SI IND.3''N IND.4' plasma etching processes (1995)
Dietrich, Alvaro Batista; Verdonck, Patrick Bernard; Mansano, Ronaldo Domingues
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
DIETRICH, Alvaro Batista e VERDONCK, Patrick Bernard e MANSANO, Ronaldo Domingues. Development and characterization of 'SI IND.3''N IND.4' plasma etching processes. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Dietrich, A. B., Verdonck, P. B., & Mansano, R. D. (1995). Development and characterization of 'SI IND.3''N IND.4' plasma etching processes. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Dietrich AB, Verdonck PB, Mansano RD. Development and characterization of 'SI IND.3''N IND.4' plasma etching processes. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Dietrich AB, Verdonck PB, Mansano RD. Development and characterization of 'SI IND.3''N IND.4' plasma etching processes. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness (1995)
Lopes, M C V; Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin; Baranauskas, V
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
LOPES, M C V et al. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Lopes, M. C. V., Santos Filho, S. G. dos, Hasenack, C. M., & Baranauskas, V. (1995). Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Pecvd teos silicon oxide deposited in a home made cluster tool system (1995)
Morimoto, Nilton Itiro ; Swart, Jacobus Willibrordus; Yoshihiro, F M
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus e YOSHIHIRO, F M. Pecvd teos silicon oxide deposited in a home made cluster tool system. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Morimoto, N. I., Swart, J. W., & Yoshihiro, F. M. (1995). Pecvd teos silicon oxide deposited in a home made cluster tool system. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Morimoto NI, Swart JW, Yoshihiro FM. Pecvd teos silicon oxide deposited in a home made cluster tool system. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Morimoto NI, Swart JW, Yoshihiro FM. Pecvd teos silicon oxide deposited in a home made cluster tool system. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
General view of the gas-phase ion chemistry of tetraethylorthosilicate (teos) and tetraemethylorthosilicate (tmos) (1995)
Silva, Maria Lucia Pereira da; Riveros, José Manuel
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidades: IQ, EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SILVA, Maria Lucia Pereira da e RIVEROS, José Manuel. General view of the gas-phase ion chemistry of tetraethylorthosilicate (teos) and tetraemethylorthosilicate (tmos). 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Silva, M. L. P. da, & Riveros, J. M. (1995). General view of the gas-phase ion chemistry of tetraethylorthosilicate (teos) and tetraemethylorthosilicate (tmos). In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Silva MLP da, Riveros JM. General view of the gas-phase ion chemistry of tetraethylorthosilicate (teos) and tetraemethylorthosilicate (tmos). Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Silva MLP da, Riveros JM. General view of the gas-phase ion chemistry of tetraethylorthosilicate (teos) and tetraemethylorthosilicate (tmos). Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Cluster tool system for silicon oxide deposition (1995)
Morimoto, Nilton Itiro ; Swart, Jacobus Willibrordus
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus. Cluster tool system for silicon oxide deposition. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Morimoto, N. I., & Swart, J. W. (1995). Cluster tool system for silicon oxide deposition. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Morimoto NI, Swart JW. Cluster tool system for silicon oxide deposition. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Morimoto NI, Swart JW. Cluster tool system for silicon oxide deposition. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Pd-mosfet transistor response to a step change in hydrogen concentration to environment with and 'N IND.2' + 'O IND.2' (1995)
Baratto, G; Ramírez Fernandez, Francisco Javier
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BARATTO, G e RAMÍREZ FERNANDEZ, Francisco Javier. Pd-mosfet transistor response to a step change in hydrogen concentration to environment with and 'N IND.2' + 'O IND.2'. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Baratto, G., & Ramírez Fernandez, F. J. (1995). Pd-mosfet transistor response to a step change in hydrogen concentration to environment with and 'N IND.2' + 'O IND.2'. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Baratto G, Ramírez Fernandez FJ. Pd-mosfet transistor response to a step change in hydrogen concentration to environment with and 'N IND.2' + 'O IND.2'. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Baratto G, Ramírez Fernandez FJ. Pd-mosfet transistor response to a step change in hydrogen concentration to environment with and 'N IND.2' + 'O IND.2'. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento-resumo
Observation of the hydrogen induced derive in pd-mosfet (1995)
Baratto, G; Ramírez Fernandez, Francisco Javier
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BARATTO, G e RAMÍREZ FERNANDEZ, Francisco Javier. Observation of the hydrogen induced derive in pd-mosfet. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Baratto, G., & Ramírez Fernandez, F. J. (1995). Observation of the hydrogen induced derive in pd-mosfet. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Baratto G, Ramírez Fernandez FJ. Observation of the hydrogen induced derive in pd-mosfet. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Baratto G, Ramírez Fernandez FJ. Observation of the hydrogen induced derive in pd-mosfet. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors (1995)
Salaun, A C; Fortin, B; Bonnaud, Olivier; Morimoto, Nilton Itiro ; Kis-Sion, K; Lhermite, H; Le Bihan, F
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SALAUN, A C et al. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Salaun, A. C., Fortin, B., Bonnaud, O., Morimoto, N. I., Kis-Sion, K., Lhermite, H., & Le Bihan, F. (1995). Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets (1995)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETT, Aparecido Sirley et al. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1995). Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
New leakage drain current model for high temperature soi mesfet (1995)
Bellodi, Marcello; Martino, João Antonio ; Flandre, M
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, M. New leakage drain current model for high temperature soi mesfet. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Bellodi, M., Martino, J. A., & Flandre, M. (1995). New leakage drain current model for high temperature soi mesfet. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Bellodi M, Martino JA, Flandre M. New leakage drain current model for high temperature soi mesfet. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Bellodi M, Martino JA, Flandre M. New leakage drain current model for high temperature soi mesfet. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k (1995)
Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Pavanello, M. A., & Martino, J. A. (1995). Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Pavanello MA, Martino JA. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Pavanello MA, Martino JA. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Dry etching of resist for three level resist process using statistical design of experiments (1995)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, H. S.
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Dry etching of resist for three level resist process using statistical design of experiments. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1995). Dry etching of resist for three level resist process using statistical design of experiments. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Mansano RD, Verdonck PB, Maciel HS. Dry etching of resist for three level resist process using statistical design of experiments. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Dry etching of resist for three level resist process using statistical design of experiments. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento-resumo
Low temperature pecvd silicon oxide (1995)
Pereyra, Inés ; Alayo Chávez, Marco Isaías
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PEREYRA, Inés e ALAYO CHÁVEZ, Marco Isaías. Low temperature pecvd silicon oxide. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Pereyra, I., & Alayo Chávez, M. I. (1995). Low temperature pecvd silicon oxide. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Pereyra I, Alayo Chávez MI. Low temperature pecvd silicon oxide. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Pereyra I, Alayo Chávez MI. Low temperature pecvd silicon oxide. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Predominance of tenkin over langmuir isotherme due to 'O IND.2' environment in pd-mosfet response (1995)
Baratto, G; Ramírez Fernandez, Francisco Javier
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BARATTO, G e RAMÍREZ FERNANDEZ, Francisco Javier. Predominance of tenkin over langmuir isotherme due to 'O IND.2' environment in pd-mosfet response. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Baratto, G., & Ramírez Fernandez, F. J. (1995). Predominance of tenkin over langmuir isotherme due to 'O IND.2' environment in pd-mosfet response. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Baratto G, Ramírez Fernandez FJ. Predominance of tenkin over langmuir isotherme due to 'O IND.2' environment in pd-mosfet response. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Baratto G, Ramírez Fernandez FJ. Predominance of tenkin over langmuir isotherme due to 'O IND.2' environment in pd-mosfet response. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento-resumo
Metallic interconect reliability due to electromigration (1995)
Molina Torres, L C
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MOLINA TORRES, L C. Metallic interconect reliability due to electromigration. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Molina Torres, L. C. (1995). Metallic interconect reliability due to electromigration. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Molina Torres LC. Metallic interconect reliability due to electromigration. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Molina Torres LC. Metallic interconect reliability due to electromigration. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films (1995)
Bottecchia, J P; Andrade, Adnei Melges de
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BOTTECCHIA, J P e ANDRADE, Adnei Melges de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Bottecchia, J. P., & Andrade, A. M. de. (1995). Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Trabalho de evento
High speed cmos ecl-compatible input circuit (1995)
Soares Junior, João Navarro ; Van Noije, Wilhelmus Adrianus Maria
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOARES JUNIOR, João Navarro e VAN NOIJE, Wilhelmus Adrianus Maria. High speed cmos ecl-compatible input circuit. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 29 nov. 2025.
APA
Soares Junior, J. N., & Van Noije, W. A. M. (1995). High speed cmos ecl-compatible input circuit. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Soares Junior JN, Van Noije WAM. High speed cmos ecl-compatible input circuit. Proceedings. 1995 ;[citado 2025 nov. 29 ]
Vancouver
Soares Junior JN, Van Noije WAM. High speed cmos ecl-compatible input circuit. Proceedings. 1995 ;[citado 2025 nov. 29 ]

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