Hole band structure of p-type delta-doping quantum wells in silicon (1998)
Rosa, A L; Scolfaro, L M R; Sipahi, Guilherme Matos 
; Enderlein, R; Leite, J. R.
Fonte: Microelectronic Engineering. Nome do evento: International Conference on Low Dimensional Structures and Devices. Unidades: IF, IME
Assuntos: MATÉRIA CONDENSADA, ENGENHARIA AUTOMOBILÍSTICA
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ABNT
ROSA, A L et al. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 15 nov. 2025. , 1998APA
Rosa, A. L., Scolfaro, L. M. R., Sipahi, G. M., Enderlein, R., & Leite, J. R. (1998). Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science.NLM
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2025 nov. 15 ]Vancouver
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2025 nov. 15 ]
