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Artigo de periodico
ISFET fabrication and characterization for hydrogen peroxide sensing (2023)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Katia Regina Akemi; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, SOLUÇÕES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DUARTE, Pedro Henrique et al. ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.646. Acesso em: 16 nov. 2025.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2023). ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, 18( 1), 1-4. doi:10.29292/jics.v18i1.646
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Artigo de periodico
Fractional-order MOS capacitor: experimental results and Monte Carlo analysis (2023)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: FRACTAIS, SIMULAÇÃO, AVALIAÇÃO DE DESEMPENHO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.660. Acesso em: 16 nov. 2025.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2023). Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, 18( 1), 1-5. doi:10.29292/jics.v18i1.660
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 16 nov. 2025.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653

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