Bordallo, Caio Cesar Mendes 
; Claeys, Cor ; Thean, Aaron; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Agopian, Paula Ghedini Der ; Sivieri, Victor de Bodt; Martino, João Antonio
Fonte: IEEE Transactions on Electron Devices. Unidade: EP
Assuntos: TRANSISTORES, SILÍCIO
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BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 17 nov. 2025.APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2559580Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2559580
