Pereira, Regiane Aparecida Ragi; Romero, Murilo Araujo 
; Nabet, Bahram
Fonte: IEEE Transactions on Electron Devices. Unidade: EESC
Assunto: SEMICONDUTORES
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ABNT
PEREIRA, Regiane Aparecida Ragi e ROMERO, Murilo Araujo e NABET, Bahram. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, v. 52, n. 2, p. 170-175, 2005Tradução . . Disponível em: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B. Acesso em: 17 nov. 2025.APA
Pereira, R. A. R., Romero, M. A., & Nabet, B. (2005). Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, 52( 2), 170-175. Recuperado de http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.NLM
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 17 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.Vancouver
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 17 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
