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Artigo de periodico
Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IEE
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALLARI, Marco Roberto et al. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 425-432, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474188. Acesso em: 15 nov. 2024.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 425-432. doi:10.1149/1.3474188
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1149/1.3474188
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1149/1.3474188
Artigo de periodico
PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Source: Journal of Integrated Circuits and Systems. Unidades: EP, IEE
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALLARI, Marco Roberto et al. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 116-124, 2010Tradução . . Acesso em: 15 nov. 2024.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, 5( 2), 116-124.
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2024 nov. 15 ]
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2024 nov. 15 ]

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