Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system (2004)
Teixeira, Ricardo C.; Doi, Ioshiaki; Swart, Jacobus Willibrordus; Zakia, M. B. P.; Santos Filho, Sebastião Gomes dos 
Source: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
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TEIXEIRA, Ricardo C. et al. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 17 nov. 2025.APA
Teixeira, R. C., Doi, I., Swart, J. W., Zakia, M. B. P., & Santos Filho, S. G. dos. (2004). Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.NLM
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 17 ]Vancouver
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 17 ]
