Band structure and surface geometry of 'AL''AS' (110) (1992)
Source: Brazilian School Semiconductor Physics, 5. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
GROSSI, A C A S e ALVES, J L A e FERRAZ, A. C. Band structure and surface geometry of 'AL''AS' (110). Brazilian School Semiconductor Physics, 5. Tradução . Singapura: World Scientific, 1992. . . Acesso em: 17 ago. 2024.APA
Grossi, A. C. A. S., Alves, J. L. A., & Ferraz, A. C. (1992). Band structure and surface geometry of 'AL''AS' (110). In Brazilian School Semiconductor Physics, 5. Singapura: World Scientific.NLM
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 ago. 17 ]Vancouver
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 ago. 17 ]