ReP USP - Resultado da busca

Trabalho de evento
Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton (2012)
Caño de Andrade, Maria Glória; Martino, João Antonio ; Aoulaiche, Marc; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor
Fonte: Proceedings of the conference. Nome do evento: International Conference on Ultimate Integration on Silicon. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAÑO DE ANDRADE, Maria Glória et al. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. 2012, Anais.. Piscataway: IEEE, 2012. . Acesso em: 14 nov. 2025.
APA
Caño de Andrade, M. G., Martino, J. A., Aoulaiche, M., Collaert, N., Simoen, E., & Claeys, C. (2012). Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. In Proceedings of the conference. Piscataway: IEEE.
NLM
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ]
Vancouver
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ]
Trabalho de evento
The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures (2012)
Nicoletti, Talitha; Martino, João Antonio ; Santos, S; Almeida, L; Aoulaiche, Marc; Veloso, A; Jurczak, Michael J; Simoen, Eddy ; Claeys, Cor
Fonte: Proceedings of the conference. Nome do evento: International Conference on Ultimate Integration on Silicon. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETTI, Talitha et al. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures. 2012, Anais.. Piscataway: IEEE, 2012. Disponível em: https://doi.org/10.1109/ULIS.2012.6193372. Acesso em: 14 nov. 2025.
APA
Nicoletti, T., Martino, J. A., Santos, S., Almeida, L., Aoulaiche, M., Veloso, A., et al. (2012). The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures. In Proceedings of the conference. Piscataway: IEEE. doi:10.1109/ULIS.2012.6193372
NLM
Nicoletti T, Martino JA, Santos S, Almeida L, Aoulaiche M, Veloso A, Jurczak MJ, Simoen E, Claeys C. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures [Internet]. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ] Available from: https://doi.org/10.1109/ULIS.2012.6193372
Vancouver
Nicoletti T, Martino JA, Santos S, Almeida L, Aoulaiche M, Veloso A, Jurczak MJ, Simoen E, Claeys C. The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures [Internet]. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ] Available from: https://doi.org/10.1109/ULIS.2012.6193372
Trabalho de evento
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices (2012)
Almeida, Luciano Mendes; Martino, João Antonio ; Aoulaiche, Marc; Sasaki, Kátia Regina Akemi; Nicoletti, Talitha; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Jurczak, Michael J
Fonte: Proceedings of the conference. Nome do evento: International Conference on Ultimate Integration on Silicon. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMEIDA, Luciano Mendes et al. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices. 2012, Anais.. Piscataway: IEEE, 2012. Disponível em: https://doi.org/10.1109/ULIS.2012.6193357. Acesso em: 14 nov. 2025.
APA
Almeida, L. M., Martino, J. A., Aoulaiche, M., Sasaki, K. R. A., Nicoletti, T., Collaert, N., et al. (2012). Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices. In Proceedings of the conference. Piscataway: IEEE. doi:10.1109/ULIS.2012.6193357
NLM
Almeida LM, Martino JA, Aoulaiche M, Sasaki KRA, Nicoletti T, Collaert N, Simoen E, Claeys C, Jurczak MJ. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices [Internet]. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ] Available from: https://doi.org/10.1109/ULIS.2012.6193357
Vancouver
Almeida LM, Martino JA, Aoulaiche M, Sasaki KRA, Nicoletti T, Collaert N, Simoen E, Claeys C, Jurczak MJ. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices [Internet]. Proceedings of the conference. 2012 ;[citado 2025 nov. 14 ] Available from: https://doi.org/10.1109/ULIS.2012.6193357

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