Fonte: SBMicro 2000 : proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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NICOLETT, Aparecido Sirley et al. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 14 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 14 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 14 ]
