Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices (2001)
Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 16 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2001). Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. In Proceedings. Pennington: The Electrochemical Society.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. Proceedings. 2001 ;[citado 2025 nov. 16 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. Proceedings. 2001 ;[citado 2025 nov. 16 ]
