Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Dessard, Vincent; Flandre, Denis
Source: Electrochemical Society Proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: ELETROQUÍMICA
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ABNT
PAVANELLO, Marcelo Antonio et al. The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 16 nov. 2025. , 1999APA
Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (1999). The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo.NLM
Pavanello MA, Martino JA, Dessard V, Flandre D. The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics. Electrochemical Society Proceedings. 1999 ; 99-3 293-298.[citado 2025 nov. 16 ]Vancouver
Pavanello MA, Martino JA, Dessard V, Flandre D. The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics. Electrochemical Society Proceedings. 1999 ; 99-3 293-298.[citado 2025 nov. 16 ]
