The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs (2005)
Camillo, Luciano Mendes; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Fonte: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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CAMILLO, Luciano Mendes et al. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Tradução . Pennington: The Electrochemical Society, 2005. . . Acesso em: 16 nov. 2025.APA
Camillo, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2005). The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society.NLM
Camillo LM, Martino JA, Simoen E, Claeys C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2025 nov. 16 ]Vancouver
Camillo LM, Martino JA, Simoen E, Claeys C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2025 nov. 16 ]
