Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques (2001)
Gautier, Gael; Crand, Samuel; Bonnaud, Olivier; Viana, Carlos Eduardo; Morimoto, Nilton Itiro 
Fonte: SBMicro 2001: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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GAUTIER, Gael et al. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 16 nov. 2025.APA
Gautier, G., Crand, S., Bonnaud, O., Viana, C. E., & Morimoto, N. I. (2001). Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 16 ]Vancouver
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 16 ]
