Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Flandre, Denis
Fonte: Proceedings. Nome do evento: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 15 nov. 2025.APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. In Proceedings. Piscataway: IEEE.NLM
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2025 nov. 15 ]Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2025 nov. 15 ]
