ReP USP - Resultado da busca

Artigo de periodico
Dislocation core properties in semiconductors (2001)
Justo Filho, João Francisco ; Antonelli, Alex; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JUSTO FILHO, João Francisco e ANTONELLI, Alex e FAZZIO, Adalberto. Dislocation core properties in semiconductors. Solid State Communications, v. 118, n. 12, p. 651-655, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00197-1. Acesso em: 28 nov. 2025.
APA
Justo Filho, J. F., Antonelli, A., & Fazzio, A. (2001). Dislocation core properties in semiconductors. Solid State Communications, 118( 12), 651-655. doi:10.1016/s0038-1098(01)00197-1
NLM
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Vancouver
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Artigo de periodico
Ab initio calculations on the compensation mechanisms in InP (2001)
Schmidt, T M; Miwa, R H; Fazzio, Adalberto ; Mota, R.
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCHMIDT, T M et al. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, n. 6, p. 353-355, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00487-7. Acesso em: 28 nov. 2025.
APA
Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7
NLM
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Vancouver
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Artigo de periodico
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' (2001)
Silva, Cesar R S da; Venezuela, P; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Cesar R S da et al. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, v. 120, n. 9-10, p. 369-373, 2001Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 28 nov. 2025.
APA
Silva, C. R. S. da, Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2001). Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, 120( 9-10), 369-373. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2025 nov. 28 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2025 nov. 28 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Quantum interference effects on the conductance of a finite antidot array in a quantum wire (2001)
Barbosa, José Camilo; Hai, Guo-Qiang ; Marega Junior, Euclydes
Source: Solid State Communications. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BARBOSA, José Camilo e HAI, Guo-Qiang e MAREGA JUNIOR, Euclydes. Quantum interference effects on the conductance of a finite antidot array in a quantum wire. Solid State Communications, v. 117, n. 12, p. 723-726, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00023-0. Acesso em: 28 nov. 2025.
APA
Barbosa, J. C., Hai, G. -Q., & Marega Junior, E. (2001). Quantum interference effects on the conductance of a finite antidot array in a quantum wire. Solid State Communications, 117( 12), 723-726. doi:10.1016/s0038-1098(01)00023-0
NLM
Barbosa JC, Hai G-Q, Marega Junior E. Quantum interference effects on the conductance of a finite antidot array in a quantum wire [Internet]. Solid State Communications. 2001 ;117( 12): 723-726.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(01)00023-0
Vancouver
Barbosa JC, Hai G-Q, Marega Junior E. Quantum interference effects on the conductance of a finite antidot array in a quantum wire [Internet]. Solid State Communications. 2001 ;117( 12): 723-726.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1016/s0038-1098(01)00023-0

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