Anisotropic reactive ion etching in silicon, using a graphite electrode (1998)
Mansano, Ronaldo Domingues 
; Verdonck, Patrick Bernard; Maciel, Homero Santiago
Source: Sensors and Actuators A. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Anisotropic reactive ion etching in silicon, using a graphite electrode. Sensors and Actuators A, v. 65, n. 2-3, p. 180-186, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0924-4247(97)01681-6. Acesso em: 14 nov. 2025.APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1998). Anisotropic reactive ion etching in silicon, using a graphite electrode. Sensors and Actuators A, 65( 2-3), 180-186. doi:10.1016/s0924-4247(97)01681-6NLM
Mansano RD, Verdonck PB, Maciel HS. Anisotropic reactive ion etching in silicon, using a graphite electrode [Internet]. Sensors and Actuators A. 1998 ; 65( 2-3): 180-186.[citado 2025 nov. 14 ] Available from: https://doi.org/10.1016/s0924-4247(97)01681-6Vancouver
Mansano RD, Verdonck PB, Maciel HS. Anisotropic reactive ion etching in silicon, using a graphite electrode [Internet]. Sensors and Actuators A. 1998 ; 65( 2-3): 180-186.[citado 2025 nov. 14 ] Available from: https://doi.org/10.1016/s0924-4247(97)01681-6
