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Filtros : "Microelectronics Technology and Devices SBMICRO 2002" "MARTINO, JOAO ANTONIO" Removido: "International Symposium on Microelectronics Technology and Devices SBMICRO" Limpar

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  • Parte de monografia/livro

    Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)

    Hoashi, Paulo Tetsuo; Martino, João Antonio

    Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP

    Assunto: MICROELETRÔNICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      HOASHI, Paulo Tetsuo e MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.

    • APA

      Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.

    • NLM

      Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]

    • Vancouver

      Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]

  • Parte de monografia/livro

    The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)

    Bellodi, Marcello; Martino, João Antonio

    Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP

    Assunto: MICROELETRÔNICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.

    • APA

      Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.

    • NLM

      Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]

    • Vancouver

      Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
  • 1

1 - 2 (2 records)

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