Formation of nickel monosilicide onto (100) silicon wafer surfaces (2002)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos 
; Laganá, Armando Antonio Maria ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
REIS, Ronaldo Willian et al. Formation of nickel monosilicide onto (100) silicon wafer surfaces. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.APA
Reis, R. W., Santos Filho, S. G. dos, Laganá, A. A. M., Doi, I., & Swart, J. W. (2002). Formation of nickel monosilicide onto (100) silicon wafer surfaces. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]Vancouver
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
