ReP USP - Resultado da busca

Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 29 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Parte de monografia/livro
Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)
Hoashi, Paulo Tetsuo; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HOASHI, Paulo Tetsuo e MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 29 nov. 2025.
APA
Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Vancouver
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Parte de monografia/livro
Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 29 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Parte de monografia/livro
The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 29 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]
Vancouver
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 29 ]

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