Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon (1995)
Santos Filho, Sebastião Gomes dos 
; Hasenack, Claus Martin
Fonte: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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SANTOS FILHO, Sebastião Gomes dos e HASENACK, Claus Martin. Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon. Journal of Solid-State Devices and Circuits, v. 3 , n. 1 , p. 1-9, 1995Tradução . . Acesso em: 16 nov. 2025.APA
Santos Filho, S. G. dos, & Hasenack, C. M. (1995). Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon. Journal of Solid-State Devices and Circuits, 3 ( 1 ), 1-9.NLM
Santos Filho SG dos, Hasenack CM. Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon. Journal of Solid-State Devices and Circuits. 1995 ;3 ( 1 ): 1-9.[citado 2025 nov. 16 ]Vancouver
Santos Filho SG dos, Hasenack CM. Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon. Journal of Solid-State Devices and Circuits. 1995 ;3 ( 1 ): 1-9.[citado 2025 nov. 16 ]
