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Filtros : "Siu Li, Máximo" "Materials Science in Semiconductor Processing" Removido: "Program Book" Limpar

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  • Artigo de periodico

    Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light (2021)

    Silva, Gabriela N.; Martins, Tiago A.; Nogueira, Içamira C.; Santos, Ricardo k.; Siu Li, Máximo ; Longo, Elson; Botelho, Gleice

    Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: SÍNTESE QUÍMICA, PROPRIEDADES DOS MATERIAIS

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    • ABNT

      SILVA, Gabriela N. et al. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light. Materials Science in Semiconductor Processing, v. No 2021, p. 106064-1-106064-12, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2021.106064. Acesso em: 05 dez. 2025.

    • APA

      Silva, G. N., Martins, T. A., Nogueira, I. C., Santos, R. k., Siu Li, M., Longo, E., & Botelho, G. (2021). Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light. Materials Science in Semiconductor Processing, No 2021, 106064-1-106064-12. doi:10.1016/j.mssp.2021.106064

    • NLM

      Silva GN, Martins TA, Nogueira IC, Santos R k., Siu Li M, Longo E, Botelho G. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light [Internet]. Materials Science in Semiconductor Processing. 2021 ; No 2021 106064-1-106064-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2021.106064

    • Vancouver

      Silva GN, Martins TA, Nogueira IC, Santos R k., Siu Li M, Longo E, Botelho G. Synthesis of Ag3PO4/SnO2 composite photocatalyst for improvements in photocatalytic activity under visible light [Internet]. Materials Science in Semiconductor Processing. 2021 ; No 2021 106064-1-106064-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2021.106064

  • Artigo de periodico

    Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method (2014)

    Tavares, M. T. S.; Lovisa, L. X.; Araújo, V. D.; Longo, E.; Siu Li, Máximo ; Nascimento, R. M.; Paskocimas, C. A.; Bomio, M. R. D.; Motta, F. V.

    Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: ZINCO, ÍNDIO (ELEMENTO QUÍMICO), DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, TECNOLOGIA DE MICRO-ONDAS

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    • ABNT

      TAVARES, M. T. S. et al. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method. Materials Science in Semiconductor Processing, v. No 2014, p. 1036-1041, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2014.08.034. Acesso em: 05 dez. 2025.

    • APA

      Tavares, M. T. S., Lovisa, L. X., Araújo, V. D., Longo, E., Siu Li, M., Nascimento, R. M., et al. (2014). Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method. Materials Science in Semiconductor Processing, No 2014, 1036-1041. doi:10.1016/j.mssp.2014.08.034

    • NLM

      Tavares MTS, Lovisa LX, Araújo VD, Longo E, Siu Li M, Nascimento RM, Paskocimas CA, Bomio MRD, Motta FV. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method [Internet]. Materials Science in Semiconductor Processing. 2014 ; No 2014 1036-1041.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2014.08.034

    • Vancouver

      Tavares MTS, Lovisa LX, Araújo VD, Longo E, Siu Li M, Nascimento RM, Paskocimas CA, Bomio MRD, Motta FV. Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)3 obtainedby the microwave-assisted hydrothermal method [Internet]. Materials Science in Semiconductor Processing. 2014 ; No 2014 1036-1041.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2014.08.034

  • Artigo de periodico

    Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25) O3 powders (2013)

    Cavalcante, L. S.; Batista, N. C.; Badapanda, T.; Costa, M. G. S.; Siu Li, Máximo ; Avansi, W.; Mastelaro, Valmor Roberto ; Longo, E.; Espinosa, J. W. M.; Gurgel, M. F. C.

    Source: Materials Science in Semiconductor Processing. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, DIFRAÇÃO POR RAIOS X, ÓPTICA (PROPRIEDADES)

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    • ABNT

      CAVALCANTE, L. S. et al. Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25) O3 powders. Materials Science in Semiconductor Processing, v. 16, n. 3, p. 1035-1045, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2012.12.010. Acesso em: 05 dez. 2025.

    • APA

      Cavalcante, L. S., Batista, N. C., Badapanda, T., Costa, M. G. S., Siu Li, M., Avansi, W., et al. (2013). Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25) O3 powders. Materials Science in Semiconductor Processing, 16( 3), 1035-1045. doi:10.1016/j.mssp.2012.12.010

    • NLM

      Cavalcante LS, Batista NC, Badapanda T, Costa MGS, Siu Li M, Avansi W, Mastelaro VR, Longo E, Espinosa JWM, Gurgel MFC. Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25) O3 powders [Internet]. Materials Science in Semiconductor Processing. 2013 ; 16( 3): 1035-1045.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2012.12.010

    • Vancouver

      Cavalcante LS, Batista NC, Badapanda T, Costa MGS, Siu Li M, Avansi W, Mastelaro VR, Longo E, Espinosa JWM, Gurgel MFC. Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25) O3 powders [Internet]. Materials Science in Semiconductor Processing. 2013 ; 16( 3): 1035-1045.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1016/j.mssp.2012.12.010
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