Filtros : "Siu Li, Máximo" "Journal of Optoelectronics and Advanced Materials" Removido: "2014" Limpar

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  • Source: Journal of Optoelectronics and Advanced Materials. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    How to cite
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    • ABNT

      MESSADDEQ, Sandra Helena et al. Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials, v. 4, n. 2, p. 375-380, 2002Tradução . . Acesso em: 05 dez. 2025.
    • APA

      Messaddeq, S. H., Siu Li, M., Lezal, D., & Messaddeq, Y. (2002). Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials, 4( 2), 375-380.
    • NLM

      Messaddeq SH, Siu Li M, Lezal D, Messaddeq Y. Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials. 2002 ;4( 2): 375-380.[citado 2025 dez. 05 ]
    • Vancouver

      Messaddeq SH, Siu Li M, Lezal D, Messaddeq Y. Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials. 2002 ;4( 2): 375-380.[citado 2025 dez. 05 ]
  • Source: Journal of Optoelectronics and Advanced Materials. Unidades: IFSC, EESC

    Assunto: MATÉRIA CONDENSADA

    PrivadoHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MESSADDEQ, Sandra Helena et al. Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, v. 3, n. 2, p. 295-302, 2001Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/07fe1fd1-5a1f-4024-8cb2-41f2a9787acc/PROD007333_1189486.pdf. Acesso em: 05 dez. 2025.
    • APA

      Messaddeq, S. H., Siu Li, M., Lezal, D., Messaddeq, Y., Ribeiro, S. J. L., Oliveira, L. F. C., & Rollo, J. M. D. de A. (2001). Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, 3( 2), 295-302. Recuperado de https://repositorio.usp.br/directbitstream/07fe1fd1-5a1f-4024-8cb2-41f2a9787acc/PROD007333_1189486.pdf
    • NLM

      Messaddeq SH, Siu Li M, Lezal D, Messaddeq Y, Ribeiro SJL, Oliveira LFC, Rollo JMD de A. Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses [Internet]. Journal of Optoelectronics and Advanced Materials. 2001 ;3( 2): 295-302.[citado 2025 dez. 05 ] Available from: https://repositorio.usp.br/directbitstream/07fe1fd1-5a1f-4024-8cb2-41f2a9787acc/PROD007333_1189486.pdf
    • Vancouver

      Messaddeq SH, Siu Li M, Lezal D, Messaddeq Y, Ribeiro SJL, Oliveira LFC, Rollo JMD de A. Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses [Internet]. Journal of Optoelectronics and Advanced Materials. 2001 ;3( 2): 295-302.[citado 2025 dez. 05 ] Available from: https://repositorio.usp.br/directbitstream/07fe1fd1-5a1f-4024-8cb2-41f2a9787acc/PROD007333_1189486.pdf

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