Source: Proceedings of the euspen. Conference titles: International Conference of the European Society for Precision Engineering & Nanotechnology. Unidade: EESC
Subjects: DIAMANTE, DUCTILIDADE, NANOTECNOLOGIA
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JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. 2009, Anais.. San Sebastian: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2009. . Acesso em: 17 out. 2024.APA
Jasinevicius, R. G., & Pizani, P. S. (2009). The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. In Proceedings of the euspen. San Sebastian: Escola de Engenharia de São Carlos, Universidade de São Paulo.NLM
Jasinevicius RG, Pizani PS. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. Proceedings of the euspen. 2009 ;[citado 2024 out. 17 ]Vancouver
Jasinevicius RG, Pizani PS. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. Proceedings of the euspen. 2009 ;[citado 2024 out. 17 ]