Annealing treatment of amorphous silicon generated by single point diamond turning (2007)
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: SILICONE, DIAMANTE, RECOZIMENTO, ESPECTROSCOPIA RAMAN
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JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, v. 34, n. 7-8, p. 680-688, 2007Tradução . . Disponível em: https://doi.org/10.1007/s00170-006-0650-z. Acesso em: 16 set. 2024.APA
Jasinevicius, R. G., & Pizani, P. S. (2007). Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, 34( 7-8), 680-688. doi:10.1007/s00170-006-0650-zNLM
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 set. 16 ] Available from: https://doi.org/10.1007/s00170-006-0650-zVancouver
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 set. 16 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
