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Artigo de periodico
Phase monitoring during Nd(Fe, M)(12)(M=Mo or Ti) compound nitrogenation by chemical reaction with sodium azide (NaN3) (2003)
Guilherme, E. D.; Rechenberg, Hercilio Rodolfo; Coaquira, José
Source: Advanced Powder Technology III-Materials Science Forum. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, REAÇÕES QUÍMICAS
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ABNT
GUILHERME, E. D. e RECHENBERG, Hercilio Rodolfo e COAQUIRA, José. Phase monitoring during Nd(Fe, M)(12)(M=Mo or Ti) compound nitrogenation by chemical reaction with sodium azide (NaN3). Advanced Powder Technology III-Materials Science Forum, v. 416-4, p. 107-112, 2003Tradução . . Acesso em: 15 nov. 2024.
APA
Guilherme, E. D., Rechenberg, H. R., & Coaquira, J. (2003). Phase monitoring during Nd(Fe, M)(12)(M=Mo or Ti) compound nitrogenation by chemical reaction with sodium azide (NaN3). Advanced Powder Technology III-Materials Science Forum, 416-4, 107-112.
NLM
Guilherme ED, Rechenberg HR, Coaquira J. Phase monitoring during Nd(Fe, M)(12)(M=Mo or Ti) compound nitrogenation by chemical reaction with sodium azide (NaN3). Advanced Powder Technology III-Materials Science Forum. 2003 ; 416-4 107-112.[citado 2024 nov. 15 ]
Vancouver
Guilherme ED, Rechenberg HR, Coaquira J. Phase monitoring during Nd(Fe, M)(12)(M=Mo or Ti) compound nitrogenation by chemical reaction with sodium azide (NaN3). Advanced Powder Technology III-Materials Science Forum. 2003 ; 416-4 107-112.[citado 2024 nov. 15 ]
Artigo de periodico
Charge transport and radiative recombination in polythiophene crystals: a first principles study (2003)
Ruini, A; Bussi, G; Ferreti, A; Caldas, Marília Junqueira; Molinari, E
Source: Synthetic Metals. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RUINI, A et al. Charge transport and radiative recombination in polythiophene crystals: a first principles study. Synthetic Metals, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0379-6779(03)00319-9. Acesso em: 15 nov. 2024.
APA
Ruini, A., Bussi, G., Ferreti, A., Caldas, M. J., & Molinari, E. (2003). Charge transport and radiative recombination in polythiophene crystals: a first principles study. Synthetic Metals. doi:10.1016/s0379-6779(03)00319-9
NLM
Ruini A, Bussi G, Ferreti A, Caldas MJ, Molinari E. Charge transport and radiative recombination in polythiophene crystals: a first principles study [Internet]. Synthetic Metals. 2003 ;[citado 2024 nov. 15 ] Available from: https://doi.org/10.1016/s0379-6779(03)00319-9
Vancouver
Ruini A, Bussi G, Ferreti A, Caldas MJ, Molinari E. Charge transport and radiative recombination in polythiophene crystals: a first principles study [Internet]. Synthetic Metals. 2003 ;[citado 2024 nov. 15 ] Available from: https://doi.org/10.1016/s0379-6779(03)00319-9
Artigo de periodico
Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition (2003)
Escote, M T; Pontes, F M; Leite, E R; Varela, J A; Jardim, R. F.; Longo, E
Source: Thin Solid Films. Unidade: IF
Assunto: FILMES FINOS
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ABNT
ESCOTE, M T et al. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition. Thin Solid Films, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf. Acesso em: 15 nov. 2024.
APA
Escote, M. T., Pontes, F. M., Leite, E. R., Varela, J. A., Jardim, R. F., & Longo, E. (2003). Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition. Thin Solid Films. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
NLM
Escote MT, Pontes FM, Leite ER, Varela JA, Jardim RF, Longo E. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition [Internet]. Thin Solid Films. 2003 ;[citado 2024 nov. 15 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
Vancouver
Escote MT, Pontes FM, Leite ER, Varela JA, Jardim RF, Longo E. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition [Internet]. Thin Solid Films. 2003 ;[citado 2024 nov. 15 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
Artigo de periodico
Structural investigation of Si-rich amorphous silicon oxynitride films (2003)
Scopel, Wanderla Luis ; Fantini, Márcia Carvalho de Abreu ; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Thin Solids Films. Unidades: IF, EP
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA
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ABNT
SCOPEL, Wanderla Luis et al. Structural investigation of Si-rich amorphous silicon oxynitride films. Thin Solids Films, v. 425, n. 1-2, p. 275-281, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(02)01053-2. Acesso em: 15 nov. 2024.
APA
Scopel, W. L., Fantini, M. C. de A., Alayo Chávez, M. I., & Pereyra, I. (2003). Structural investigation of Si-rich amorphous silicon oxynitride films. Thin Solids Films, 425( 1-2), 275-281. doi:10.1016/s0040-6090(02)01053-2
NLM
Scopel WL, Fantini MC de A, Alayo Chávez MI, Pereyra I. Structural investigation of Si-rich amorphous silicon oxynitride films [Internet]. Thin Solids Films. 2003 ; 425( 1-2): 275-281.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1016/s0040-6090(02)01053-2
Vancouver
Scopel WL, Fantini MC de A, Alayo Chávez MI, Pereyra I. Structural investigation of Si-rich amorphous silicon oxynitride films [Internet]. Thin Solids Films. 2003 ; 425( 1-2): 275-281.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1016/s0040-6090(02)01053-2

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