Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+' (1999)
Fonte: Radiation Effects and Defects in Solids. Unidade: IF
Assuntos: FÍSICA NUCLEAR, FÍSICA
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SOUZA, S S de e BLAK, Ana Regina. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids, v. 151, n. 1-4, p. 255-259, 1999Tradução . . Acesso em: 14 nov. 2025.APA
Souza, S. S. de, & Blak, A. R. (1999). Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids, 151( 1-4), 255-259.NLM
Souza SS de, Blak AR. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids. 1999 ; 151( 1-4): 255-259.[citado 2025 nov. 14 ]Vancouver
Souza SS de, Blak AR. Defect simulation in KBr, KCL and KI doped with 'Ge POT.2+', 'Ga POT.+' and 'Sn POT.2+'. Radiation Effects and Defects in Solids. 1999 ; 151( 1-4): 255-259.[citado 2025 nov. 14 ]
