Scalvi, Luis Vicente de Andrade; Geraldo, Viviany; Messias, Fábio Rogério; Siu Li, Máximo 
; Santilli, C V; Pulcinelli, Sandra Helena
Source: Radiation Effects and Defects in Solids. Unidade: IFSC
Subjects: ÓPTICA, MATERIAIS (PROPRIEDADES ELÉTRICAS), FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCALVI, Luis Vicente de Andrade et al. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, v. 156, n. 1-4, p. 145-149, 2001Tradução . . Disponível em: https://doi.org/10.1080/10420150108216886. Acesso em: 09 dez. 2025.APA
Scalvi, L. V. de A., Geraldo, V., Messias, F. R., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (2001). Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, 156( 1-4), 145-149. doi:10.1080/10420150108216886NLM
Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2025 dez. 09 ] Available from: https://doi.org/10.1080/10420150108216886Vancouver
Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2025 dez. 09 ] Available from: https://doi.org/10.1080/10420150108216886
