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Filtros : "Mendes, A. C." "Current Applied Physics" Limpar

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  • Artigo de periodico

    Solvent effect on the optimization of 1,54 µm emission in Er-doped Y2O3-Al2O3-SiO2 powders synthesized by a modified Pechini method (2013)

    Mendes, A. C.; Maia, L. J. Q.; Paris, E. C.; Siu Li, Máximo

    Source: Current Applied Physics. Unidade: IFSC

    Subjects: LUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS, ÓPTICA (APLICAÇÕES)

    Acesso à fonteDOIHow to cite
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    • ABNT

      MENDES, A. C. et al. Solvent effect on the optimization of 1,54 µm emission in Er-doped Y2O3-Al2O3-SiO2 powders synthesized by a modified Pechini method. Current Applied Physics, v. 13, n. 8, p. 1558-1565, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.cap.2013.06.012. Acesso em: 12 out. 2024.

    • APA

      Mendes, A. C., Maia, L. J. Q., Paris, E. C., & Siu Li, M. (2013). Solvent effect on the optimization of 1,54 µm emission in Er-doped Y2O3-Al2O3-SiO2 powders synthesized by a modified Pechini method. Current Applied Physics, 13( 8), 1558-1565. doi:10.1016/j.cap.2013.06.012

    • NLM

      Mendes AC, Maia LJQ, Paris EC, Siu Li M. Solvent effect on the optimization of 1,54 µm emission in Er-doped Y2O3-Al2O3-SiO2 powders synthesized by a modified Pechini method [Internet]. Current Applied Physics. 2013 ; 13( 8): 1558-1565.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.cap.2013.06.012

    • Vancouver

      Mendes AC, Maia LJQ, Paris EC, Siu Li M. Solvent effect on the optimization of 1,54 µm emission in Er-doped Y2O3-Al2O3-SiO2 powders synthesized by a modified Pechini method [Internet]. Current Applied Physics. 2013 ; 13( 8): 1558-1565.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.cap.2013.06.012

  • Artigo de periodico

    Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films (2010)

    Mendes, A. C.; Maia, L. J. Q.; Messaddeq, S. H.; Messaddeq, Y.; Zanatta, Antonio Ricardo ; Siu Li, Máximo

    Source: Current Applied Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN (ANÁLISE), FILMES FINOS

    Acesso à fonteDOIHow to cite
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    • ABNT

      MENDES, A. C. et al. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, v. No 2010, n. 6, p. 1411-1415, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.cap.2010.05.005. Acesso em: 12 out. 2024.

    • APA

      Mendes, A. C., Maia, L. J. Q., Messaddeq, S. H., Messaddeq, Y., Zanatta, A. R., & Siu Li, M. (2010). Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, No 2010( 6), 1411-1415. doi:10.1016/j.cap.2010.05.005

    • NLM

      Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005

    • Vancouver

      Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005
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