Toward the formation of COOH terminated semiconductor surfaces: a first principles analysis (2005)
Source: Programme. Conference titles: Psi-k Conference. Unidade: IF
Assunto: SEMICONDUTORES
ABNT
CUCINOTTA, C S et al. Toward the formation of COOH terminated semiconductor surfaces: a first principles analysis. 2005, Anais.. Strasbourg: European Science foundation, 2005. Disponível em: http://www.fyslab.hut.fi/psik2005/pdfs/1398.pdf. Acesso em: 11 nov. 2025.APA
Cucinotta, C. S., Ruini, A., Caldas, M. J., & Molinari, E. (2005). Toward the formation of COOH terminated semiconductor surfaces: a first principles analysis. In Programme. Strasbourg: European Science foundation. Recuperado de http://www.fyslab.hut.fi/psik2005/pdfs/1398.pdfNLM
Cucinotta CS, Ruini A, Caldas MJ, Molinari E. Toward the formation of COOH terminated semiconductor surfaces: a first principles analysis [Internet]. Programme. 2005 ;[citado 2025 nov. 11 ] Available from: http://www.fyslab.hut.fi/psik2005/pdfs/1398.pdfVancouver
Cucinotta CS, Ruini A, Caldas MJ, Molinari E. Toward the formation of COOH terminated semiconductor surfaces: a first principles analysis [Internet]. Programme. 2005 ;[citado 2025 nov. 11 ] Available from: http://www.fyslab.hut.fi/psik2005/pdfs/1398.pdf
