Souza, P. L.; Yavich, B; Pamplona-Pires, M; Henriques, André Bohomoletz 
; Gonçalves, L. C. D.
Source: Journal of Applied Physics. Unidade: IF
Assunto: ELETRÔNICA
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ABNT
SOUZA, P. L. et al. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 82, n. 4, p. 1700-1705, 1997Tradução . . Acesso em: 27 nov. 2025.APA
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 82( 4), 1700-1705.NLM
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2025 nov. 27 ]Vancouver
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2025 nov. 27 ]
