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  • Dissertação (Mestrado)

    Plasmon-exciton coupling regimes in MoS2 monolayers on gold gratings: a reflectance analysis via FDTD simulations (2025)

    Oliveira, Willer Frank de Sousa; Marega Junior, Euclydes (Orientador)

    Unidade: IFSC

    Subjects: ÓPTICA, SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS

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      OLIVEIRA, Willer Frank de Sousa. Plasmon-exciton coupling regimes in MoS2 monolayers on gold gratings: a reflectance analysis via FDTD simulations. 2025. Dissertação (Mestrado) – Universidade de São Paulo, São Carlos, 2025. Disponível em: https://www.teses.usp.br/teses/disponiveis/76/76134/tde-27082025-093115/. Acesso em: 07 dez. 2025.

    • APA

      Oliveira, W. F. de S. (2025). Plasmon-exciton coupling regimes in MoS2 monolayers on gold gratings: a reflectance analysis via FDTD simulations (Dissertação (Mestrado). Universidade de São Paulo, São Carlos. Recuperado de https://www.teses.usp.br/teses/disponiveis/76/76134/tde-27082025-093115/

    • NLM

      Oliveira WF de S. Plasmon-exciton coupling regimes in MoS2 monolayers on gold gratings: a reflectance analysis via FDTD simulations [Internet]. 2025 ;[citado 2025 dez. 07 ] Available from: https://www.teses.usp.br/teses/disponiveis/76/76134/tde-27082025-093115/

    • Vancouver

      Oliveira WF de S. Plasmon-exciton coupling regimes in MoS2 monolayers on gold gratings: a reflectance analysis via FDTD simulations [Internet]. 2025 ;[citado 2025 dez. 07 ] Available from: https://www.teses.usp.br/teses/disponiveis/76/76134/tde-27082025-093115/

  • Artigo de periodico

    A comprehensive comparison among capacitive, thermodynamic, and drift-diffusion models for steady-state responses of nanostructured organic electrochemical transistors (2025)

    Unigarro, Andres David Peña ; Günther, Florian Steffen

    Source: ACS Applied Nano Materials. Unidade: IFSC

    Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS), NANOELETRÔNICA

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      UNIGARRO, Andres David Peña e GÜNTHER, Florian Steffen. A comprehensive comparison among capacitive, thermodynamic, and drift-diffusion models for steady-state responses of nanostructured organic electrochemical transistors. ACS Applied Nano Materials, v. 8, n. 23, p. 12329-12341 + supporting information, 2025Tradução . . Disponível em: https://doi.org/10.1021/acsanm.5c02101. Acesso em: 07 dez. 2025.

    • APA

      Unigarro, A. D. P., & Günther, F. S. (2025). A comprehensive comparison among capacitive, thermodynamic, and drift-diffusion models for steady-state responses of nanostructured organic electrochemical transistors. ACS Applied Nano Materials, 8( 23), 12329-12341 + supporting information. doi:10.1021/acsanm.5c02101

    • NLM

      Unigarro ADP, Günther FS. A comprehensive comparison among capacitive, thermodynamic, and drift-diffusion models for steady-state responses of nanostructured organic electrochemical transistors [Internet]. ACS Applied Nano Materials. 2025 ; 8( 23): 12329-12341 + supporting information.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1021/acsanm.5c02101

    • Vancouver

      Unigarro ADP, Günther FS. A comprehensive comparison among capacitive, thermodynamic, and drift-diffusion models for steady-state responses of nanostructured organic electrochemical transistors [Internet]. ACS Applied Nano Materials. 2025 ; 8( 23): 12329-12341 + supporting information.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1021/acsanm.5c02101

  • Tese (Doutorado)

    Micro/nanometric processing of CVD diamond with femtosecond laser pulses (2025)

    Nolasco, Lucas Konaka ; Mendonça, Cleber Renato (Orientador)

    Unidade: EESC

    Subjects: ÓPTICA NÃO LINEAR, SEMICONDUTORES, DIAMANTE, LASER

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      NOLASCO, Lucas Konaka. Micro/nanometric processing of CVD diamond with femtosecond laser pulses. 2025. Tese (Doutorado) – Universidade de São Paulo, São Carlos, 2025. Disponível em: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-22042025-102725/. Acesso em: 07 dez. 2025.

    • APA

      Nolasco, L. K. (2025). Micro/nanometric processing of CVD diamond with femtosecond laser pulses (Tese (Doutorado). Universidade de São Paulo, São Carlos. Recuperado de https://www.teses.usp.br/teses/disponiveis/18/18158/tde-22042025-102725/

    • NLM

      Nolasco LK. Micro/nanometric processing of CVD diamond with femtosecond laser pulses [Internet]. 2025 ;[citado 2025 dez. 07 ] Available from: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-22042025-102725/

    • Vancouver

      Nolasco LK. Micro/nanometric processing of CVD diamond with femtosecond laser pulses [Internet]. 2025 ;[citado 2025 dez. 07 ] Available from: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-22042025-102725/

  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Program. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. 2025, Anais.. Singapore: International Union of Pure and Applied Physics - IUPAP, 2025. Disponível em: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070. Acesso em: 07 dez. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. In Program. Singapore: International Union of Pure and Applied Physics - IUPAP. Recuperado de https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 dez. 07 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 dez. 07 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

  • Artigo de periodico

    Nanocrystalline hexagonal boron nitride thin films deposited by dynamic glancing angle deposition for UV-emitting devices and detectors (2025)

    Mello, Saron Rosy Sales de ; Cemin, Felipe ; Echeverrigaray, Fernando Graniero; Jimenez, Mawin Javier Martinez; Piroli, Vanessa; Costa, Fábio Juvêncio Ramalho; Boeira, Carla Daniela ; Leidens, Leonardo Mathias ; Riul Junior, Antonio ; Figueroa, Carlos Alejandro ; Zagonel, Luiz Fernando ; Zanatta, Antonio Ricardo ; Alvarez, Fernando

    Source: ACS Applied Nano Materials. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, FILMES FINOS

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      MELLO, Saron Rosy Sales de et al. Nanocrystalline hexagonal boron nitride thin films deposited by dynamic glancing angle deposition for UV-emitting devices and detectors. ACS Applied Nano Materials, v. 8, n. 23, p. 12380-12392 + supporting information, 2025Tradução . . Disponível em: https://doi.org/10.1021/acsanm.5c02214. Acesso em: 07 dez. 2025.

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      Mello, S. R. S. de, Cemin, F., Echeverrigaray, F. G., Jimenez, M. J. M., Piroli, V., Costa, F. J. R., et al. (2025). Nanocrystalline hexagonal boron nitride thin films deposited by dynamic glancing angle deposition for UV-emitting devices and detectors. ACS Applied Nano Materials, 8( 23), 12380-12392 + supporting information. doi:10.1021/acsanm.5c02214

    • NLM

      Mello SRS de, Cemin F, Echeverrigaray FG, Jimenez MJM, Piroli V, Costa FJR, Boeira CD, Leidens LM, Riul Junior A, Figueroa CA, Zagonel LF, Zanatta AR, Alvarez F. Nanocrystalline hexagonal boron nitride thin films deposited by dynamic glancing angle deposition for UV-emitting devices and detectors [Internet]. ACS Applied Nano Materials. 2025 ; 8( 23): 12380-12392 + supporting information.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1021/acsanm.5c02214

    • Vancouver

      Mello SRS de, Cemin F, Echeverrigaray FG, Jimenez MJM, Piroli V, Costa FJR, Boeira CD, Leidens LM, Riul Junior A, Figueroa CA, Zagonel LF, Zanatta AR, Alvarez F. Nanocrystalline hexagonal boron nitride thin films deposited by dynamic glancing angle deposition for UV-emitting devices and detectors [Internet]. ACS Applied Nano Materials. 2025 ; 8( 23): 12380-12392 + supporting information.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1021/acsanm.5c02214

  • Artigo de periodico

    Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)

    Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.

    Source: Applied Physics Letters. Unidade: IF

    Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS

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      BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 07 dez. 2025.

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      Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331

    • NLM

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 dez. 07 ] Available from: https://doi.org/10.1063/5.0244331

    • Vancouver

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 dez. 07 ] Available from: https://doi.org/10.1063/5.0244331

  • Artigo de periodico

    Simulation, synthesis, and characterization of Ni–Co and its co-doping in ZnO for energy applications (2025)

    Hien, Nguyen Cao; Thang, Nguyen Hoc ; Mahmood, Tahir; Pawlicka, Agnieszka ; Anwar, Mamoona; Munir, Muhammad; Ghafoor, Abdul; Khoa, Tran Le Anh

    Source: RSC Advances. Unidade: IQSC

    Subjects: SEMICONDUTORES, ENERGIA, NANOPARTÍCULAS, NÍQUEL, COBALTO

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      HIEN, Nguyen Cao et al. Simulation, synthesis, and characterization of Ni–Co and its co-doping in ZnO for energy applications. RSC Advances, v. 15, p. 22730-22744, 2025Tradução . . Disponível em: https://doi.org/10.1039/D5RA02746B. Acesso em: 07 dez. 2025.

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      Hien, N. C., Thang, N. H., Mahmood, T., Pawlicka, A., Anwar, M., Munir, M., et al. (2025). Simulation, synthesis, and characterization of Ni–Co and its co-doping in ZnO for energy applications. RSC Advances, 15, 22730-22744. doi:10.1039/D5RA02746B

    • NLM

      Hien NC, Thang NH, Mahmood T, Pawlicka A, Anwar M, Munir M, Ghafoor A, Khoa TLA. Simulation, synthesis, and characterization of Ni–Co and its co-doping in ZnO for energy applications [Internet]. RSC Advances. 2025 ; 15 22730-22744.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1039/D5RA02746B

    • Vancouver

      Hien NC, Thang NH, Mahmood T, Pawlicka A, Anwar M, Munir M, Ghafoor A, Khoa TLA. Simulation, synthesis, and characterization of Ni–Co and its co-doping in ZnO for energy applications [Internet]. RSC Advances. 2025 ; 15 22730-22744.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1039/D5RA02746B

  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole Coulomb drag (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Abstract Book. Conference titles: International Conference on Nanomaterials Science and Mechanical Engineering. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole Coulomb drag. 2025, Anais.. Aveiro: Universidade de Aveiro, 2025. Disponível em: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf. Acesso em: 07 dez. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole Coulomb drag. In Abstract Book. Aveiro: Universidade de Aveiro. Recuperado de https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

  • Artigo de periodico

    Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)

    Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da

    Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 07 dez. 2025.

    • APA

      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962

    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1063/5.0187962

    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1063/5.0187962

  • Trabalho de evento-resumo

    Realistic effective-mass model for III-V zincblend semiconductors (2024)

    Wanderley, Adilson Barros ; Alves, Horácio Wagner Leite; Sipahi, Guilherme Matos

    Source: Abstract Book. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC

    Subjects: MECÂNICA QUÂNTICA, SISTEMAS HAMILTONIANOS, SEMICONDUTORES

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      WANDERLEY, Adilson Barros e ALVES, Horácio Wagner Leite e SIPAHI, Guilherme Matos. Realistic effective-mass model for III-V zincblend semiconductors. 2024, Anais.. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM, 2024. Disponível em: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf. Acesso em: 07 dez. 2025.

    • APA

      Wanderley, A. B., Alves, H. W. L., & Sipahi, G. M. (2024). Realistic effective-mass model for III-V zincblend semiconductors. In Abstract Book. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM. Recuperado de https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf

    • NLM

      Wanderley AB, Alves HWL, Sipahi GM. Realistic effective-mass model for III-V zincblend semiconductors [Internet]. Abstract Book. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf

    • Vancouver

      Wanderley AB, Alves HWL, Sipahi GM. Realistic effective-mass model for III-V zincblend semiconductors [Internet]. Abstract Book. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/484dc2ef-d5a2-4a67-bdee-09cbfd3d5a7c/3236394.pdf

  • Artigo de periodico

    Magnetic field breakdown of electron hydrodynamics (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Oliveira, Vinicius Andrade de ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES

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      PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 07 dez. 2025.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411

    • NLM

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

    • Vancouver

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

  • Trabalho de evento-resumo

    Effects of the formation of 1-D and 3-D ZnO/NiO heterostructure on the selectivity towards toxic gases (2024)

    Tagliaferro, Julia Coelho; Mastelaro, Valmor Roberto

    Source: Presentation program. Conference titles: Brazil MRS Meeting. Unidades: IFSC, EESC

    Subjects: GASES, SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS

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      TAGLIAFERRO, Julia Coelho e MASTELARO, Valmor Roberto. Effects of the formation of 1-D and 3-D ZnO/NiO heterostructure on the selectivity towards toxic gases. 2024, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2024. Disponível em: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/279_1717768579.pdf. Acesso em: 07 dez. 2025.

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      Tagliaferro, J. C., & Mastelaro, V. R. (2024). Effects of the formation of 1-D and 3-D ZnO/NiO heterostructure on the selectivity towards toxic gases. In Presentation program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/279_1717768579.pdf

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      Tagliaferro JC, Mastelaro VR. Effects of the formation of 1-D and 3-D ZnO/NiO heterostructure on the selectivity towards toxic gases [Internet]. Presentation program. 2024 ;[citado 2025 dez. 07 ] Available from: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/279_1717768579.pdf

    • Vancouver

      Tagliaferro JC, Mastelaro VR. Effects of the formation of 1-D and 3-D ZnO/NiO heterostructure on the selectivity towards toxic gases [Internet]. Presentation program. 2024 ;[citado 2025 dez. 07 ] Available from: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/279_1717768579.pdf

  • Trabalho de evento-resumo

    Manufacturing of a photo-electrolyzer for large scale production of green hydrogen. (2024)

    Vieira, Gabriel Natulini; Rosa, Washington Santa ; Gonçalves, Renato Vitalino

    Source: Presentation program. Conference titles: Brazil MRS Meeting. Unidades: IFSC, EESC

    Subjects: SEMICONDUTORES, HIDROGÊNIO, EFEITO ESTUFA, COMBUSTÍVEIS

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      VIEIRA, Gabriel Natulini e ROSA, Washington Santa e GONÇALVES, Renato Vitalino. Manufacturing of a photo-electrolyzer for large scale production of green hydrogen. 2024, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2024. Disponível em: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/275_1712330368.pdf. Acesso em: 07 dez. 2025.

    • APA

      Vieira, G. N., Rosa, W. S., & Gonçalves, R. V. (2024). Manufacturing of a photo-electrolyzer for large scale production of green hydrogen. In Presentation program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/275_1712330368.pdf

    • NLM

      Vieira GN, Rosa WS, Gonçalves RV. Manufacturing of a photo-electrolyzer for large scale production of green hydrogen. [Internet]. Presentation program. 2024 ;[citado 2025 dez. 07 ] Available from: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/275_1712330368.pdf

    • Vancouver

      Vieira GN, Rosa WS, Gonçalves RV. Manufacturing of a photo-electrolyzer for large scale production of green hydrogen. [Internet]. Presentation program. 2024 ;[citado 2025 dez. 07 ] Available from: https://www.eventweb.com.br/xxiisbpmat/specific-files/manuscripts/xxiisbpmat/275_1712330368.pdf

  • Trabalho de evento-resumo

    Electron paramagnetic resonance of localized spins in topological insulator candidates (2024)

    Aller, G.; Quito, Victor Luiz ; Souza, Jean Carlo; Pagliuso, Pascoal Jose Giglio ; Miranda, Eduardo

    Source: Program. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidade: IFSC

    Subjects: FÍSICA TEÓRICA, SEMICONDUTORES, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA

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      ALLER, G. et al. Electron paramagnetic resonance of localized spins in topological insulator candidates. 2024, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2024. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2024/sys/resumos/R0602-1.pdf. Acesso em: 07 dez. 2025.

    • APA

      Aller, G., Quito, V. L., Souza, J. C., Pagliuso, P. J. G., & Miranda, E. (2024). Electron paramagnetic resonance of localized spins in topological insulator candidates. In Program. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2024/sys/resumos/R0602-1.pdf

    • NLM

      Aller G, Quito VL, Souza JC, Pagliuso PJG, Miranda E. Electron paramagnetic resonance of localized spins in topological insulator candidates [Internet]. Program. 2024 ;[citado 2025 dez. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2024/sys/resumos/R0602-1.pdf

    • Vancouver

      Aller G, Quito VL, Souza JC, Pagliuso PJG, Miranda E. Electron paramagnetic resonance of localized spins in topological insulator candidates [Internet]. Program. 2024 ;[citado 2025 dez. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2024/sys/resumos/R0602-1.pdf

  • Trabalho de evento-resumo

    Fitting method for band structures using k·p Hamiltonians and symmetry properties to obtain effective mass parameters and g-factor (2024)

    Wanderley, Adilson Barros ; Alves, Horácio Wagner Leite; Sipahi, Guilherme Matos

    Source: Abstract Book. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC

    Subjects: MECÂNICA QUÂNTICA, SISTEMAS HAMILTONIANOS, APRENDIZADO COMPUTACIONAL, FÍSICA COMPUTACIONAL, SEMICONDUTORES

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      WANDERLEY, Adilson Barros e ALVES, Horácio Wagner Leite e SIPAHI, Guilherme Matos. Fitting method for band structures using k·p Hamiltonians and symmetry properties to obtain effective mass parameters and g-factor. 2024, Anais.. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM, 2024. Disponível em: https://repositorio.usp.br/directbitstream/ee7b0be5-e3ff-4942-b47c-da1701b0e384/3236393.pdf. Acesso em: 07 dez. 2025.

    • APA

      Wanderley, A. B., Alves, H. W. L., & Sipahi, G. M. (2024). Fitting method for band structures using k·p Hamiltonians and symmetry properties to obtain effective mass parameters and g-factor. In Abstract Book. Campinas: Centro Nacional de Pesquisa em Energia e Materiais - CNPEM. Recuperado de https://repositorio.usp.br/directbitstream/ee7b0be5-e3ff-4942-b47c-da1701b0e384/3236393.pdf

    • NLM

      Wanderley AB, Alves HWL, Sipahi GM. Fitting method for band structures using k·p Hamiltonians and symmetry properties to obtain effective mass parameters and g-factor [Internet]. Abstract Book. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/ee7b0be5-e3ff-4942-b47c-da1701b0e384/3236393.pdf

    • Vancouver

      Wanderley AB, Alves HWL, Sipahi GM. Fitting method for band structures using k·p Hamiltonians and symmetry properties to obtain effective mass parameters and g-factor [Internet]. Abstract Book. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/ee7b0be5-e3ff-4942-b47c-da1701b0e384/3236393.pdf

  • Trabalho de evento-resumo

    K·p hamiltonian and band structure fitting strategies applied to III-V semiconductors to determine interband momentum elements and spin-orbit interaction elements (2024)

    Sandoval, Marcelo Alejandro Toloza ; Alves, Horácio Wagner Leite; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos

    Source: Livro de Resumos. Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC. Unidade: IFSC

    Subjects: APRENDIZADO COMPUTACIONAL, FÍSICA COMPUTACIONAL, SEMICONDUTORES

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    • ABNT

      SANDOVAL, Marcelo Alejandro Toloza et al. K·p hamiltonian and band structure fitting strategies applied to III-V semiconductors to determine interband momentum elements and spin-orbit interaction elements. 2024, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC, 2024. Disponível em: https://repositorio.usp.br/directbitstream/5291e39b-e237-4f4f-92fd-9d907a4ad96e/PROD036716_3232084.pdf. Acesso em: 07 dez. 2025.

    • APA

      Sandoval, M. A. T., Alves, H. W. L., Wanderley, A. B., & Sipahi, G. M. (2024). K·p hamiltonian and band structure fitting strategies applied to III-V semiconductors to determine interband momentum elements and spin-orbit interaction elements. In Livro de Resumos. São Carlos: Instituto de Física de São Carlos - IFSC. Recuperado de https://repositorio.usp.br/directbitstream/5291e39b-e237-4f4f-92fd-9d907a4ad96e/PROD036716_3232084.pdf

    • NLM

      Sandoval MAT, Alves HWL, Wanderley AB, Sipahi GM. K·p hamiltonian and band structure fitting strategies applied to III-V semiconductors to determine interband momentum elements and spin-orbit interaction elements [Internet]. Livro de Resumos. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/5291e39b-e237-4f4f-92fd-9d907a4ad96e/PROD036716_3232084.pdf

    • Vancouver

      Sandoval MAT, Alves HWL, Wanderley AB, Sipahi GM. K·p hamiltonian and band structure fitting strategies applied to III-V semiconductors to determine interband momentum elements and spin-orbit interaction elements [Internet]. Livro de Resumos. 2024 ;[citado 2025 dez. 07 ] Available from: https://repositorio.usp.br/directbitstream/5291e39b-e237-4f4f-92fd-9d907a4ad96e/PROD036716_3232084.pdf

  • Curadoria

    Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications (2023)

    Mastelaro, Valmor Roberto (cur) ; Silva, Luís Fernando da (cur) ; Corrêa, Daniel Souza (cur) ; Volanti, Diogo Paschoalini (cur)

    Unidade: IFSC

    Subjects: SENSOR, SEMICONDUTORES, PESQUISA CIENTÍFICA

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    • ABNT

      Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications. . Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. . Acesso em: 07 dez. 2025. , 2023

    • APA

      Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications. (2023). Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat.

    • NLM

      Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications. 2023 ;[citado 2025 dez. 07 ]

    • Vancouver

      Symposium D: Advanced Materials Applied in sensors for Health, Agricultural, and Environmental Applications. 2023 ;[citado 2025 dez. 07 ]

  • Artigo de periodico

    Experimental study of MISHEMT from 450 K down to 200 K for analog applications (2023)

    Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der

    Source: Solid State Electronics. Unidade: EP

    Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, SEMICONDUTORES

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    • ABNT

      PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 07 dez. 2025.

    • APA

      Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742

    • NLM

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1016/j.sse.2023.108742

    • Vancouver

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450 K down to 200 K for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2025 dez. 07 ] Available from: https://doi.org/10.1016/j.sse.2023.108742

  • Artigo de periodico

    Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology (2023)

    Yauri, Ricardo; Gamero Sobero, Vanessa Julia; Alayo Chávez, Marco Isaías

    Source: Indonesian Journal of Electrical Engineering and Computer Science. Unidade: EP

    Subjects: DISPOSITIVOS ÓPTICOS, ÓPTICA, SEMICONDUTORES

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    • ABNT

      YAURI, Ricardo e GAMERO SOBERO, Vanessa Julia e ALAYO CHÁVEZ, Marco Isaías. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology. Indonesian Journal of Electrical Engineering and Computer Science, v. 32, n. 3, p. 1346-1352, 2023Tradução . . Disponível em: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352. Acesso em: 07 dez. 2025.

    • APA

      Yauri, R., Gamero Sobero, V. J., & Alayo Chávez, M. I. (2023). Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology. Indonesian Journal of Electrical Engineering and Computer Science, 32( 3), 1346-1352. doi:10.11591/ijeecs.v32.i3.pp1346-1352

    • NLM

      Yauri R, Gamero Sobero VJ, Alayo Chávez MI. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology [Internet]. Indonesian Journal of Electrical Engineering and Computer Science. 2023 ; 32( 3): 1346-1352.[citado 2025 dez. 07 ] Available from: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352

    • Vancouver

      Yauri R, Gamero Sobero VJ, Alayo Chávez MI. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology [Internet]. Indonesian Journal of Electrical Engineering and Computer Science. 2023 ; 32( 3): 1346-1352.[citado 2025 dez. 07 ] Available from: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352

  • Trabalho de evento-resumo

    Strain in polytypic nanowires (2023)

    Siqueira, Anderson Henrique; Sipahi, Guilherme Matos ; Alves, Horácio Wagner Leite

    Source: Program. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, SEMICONDUTORES

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    • ABNT

      SIQUEIRA, Anderson Henrique e SIPAHI, Guilherme Matos e ALVES, Horácio Wagner Leite. Strain in polytypic nanowires. 2023, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2023. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R1121-1.pdf. Acesso em: 07 dez. 2025.

    • APA

      Siqueira, A. H., Sipahi, G. M., & Alves, H. W. L. (2023). Strain in polytypic nanowires. In Program. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R1121-1.pdf

    • NLM

      Siqueira AH, Sipahi GM, Alves HWL. Strain in polytypic nanowires [Internet]. Program. 2023 ;[citado 2025 dez. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R1121-1.pdf

    • Vancouver

      Siqueira AH, Sipahi GM, Alves HWL. Strain in polytypic nanowires [Internet]. Program. 2023 ;[citado 2025 dez. 07 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2023/sys/resumos/R1121-1.pdf

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