Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy (1998)
Souza, P. L.; Yavich, B; Pamplona-Pires, M; Henriques, André Bohomoletz 
; Gonçalves, L. C. D.
Source: Radiation Effects and Defect in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Semiconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
SOUZA, P. L. et al. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers. . Acesso em: 09 nov. 2025. , 1998APA
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1998). Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers.NLM
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 81-97.[citado 2025 nov. 09 ]Vancouver
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 81-97.[citado 2025 nov. 09 ]
