Filtros : "Journal of Applied Physics" "Salamo, G. J." Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS

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    • ABNT

      MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 08 nov. 2025.
    • APA

      Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
    • NLM

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
    • Vancouver

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS

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    • ABNT

      KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 08 nov. 2025.
    • APA

      Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
    • NLM

      Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
    • Vancouver

      Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA

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    • ABNT

      MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 08 nov. 2025.
    • APA

      Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
    • NLM

      Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4779686
    • Vancouver

      Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4779686
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, POÇOS QUÂNTICOS, ÓPTICA ELETRÔNICA

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      GUZUN, D. et al. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, v. 113, n. 15, p. 154304-1-154304-5, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4801891. Acesso em: 08 nov. 2025.
    • APA

      Guzun, D., Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Tarasov, G. G., et al. (2013). Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, 113( 15), 154304-1-154304-5. doi:10.1063/1.4801891
    • NLM

      Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4801891
    • Vancouver

      Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4801891
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA

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    • ABNT

      TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 08 nov. 2025.
    • APA

      Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
    • NLM

      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
    • Vancouver

      Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, POLARIZAÇÃO

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      MAZUR, Yu. I. et al. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, v. 112, n. 8, p. 084314-1-084314-7, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4759318. Acesso em: 08 nov. 2025.
    • APA

      Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Lytvyn, P. M., Zhuchenko, Z. Y., et al. (2012). Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, 112( 8), 084314-1-084314-7. doi:10.1063/1.4759318
    • NLM

      Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
    • Vancouver

      Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, GASES, TEMPERATURA

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    • ABNT

      TEODORO, M. D. et al. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, v. 103, n. 9, p. 093508-1-093508-7, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2913513. Acesso em: 08 nov. 2025.
    • APA

      Teodoro, M. D., Dias, I. F. L., Laureto, E., Duarte, J. L., Borrero, P. P. G., Lourenço, S. A., et al. (2008). Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, 103( 9), 093508-1-093508-7. doi:10.1063/1.2913513
    • NLM

      Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513
    • Vancouver

      Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513

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