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Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Junior, Euclydes ; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains (2014)
Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Ware, M. E.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 08 nov. 2025.
APA
Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
NLM
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
Vancouver
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4902311
Artigo de periodico
Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures (2013)
Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Guzun, D.; Ware, M. E.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA
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ABNT
MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
NLM
Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4779686
Vancouver
Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4779686
Artigo de periodico
Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures (2013)
Guzun, D.; Mazur, Yu. I.; Dorogan, V. G.; Ware, M. E.; Marega Junior, Euclydes ; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: MATERIAIS NANOESTRUTURADOS, POÇOS QUÂNTICOS, ÓPTICA ELETRÔNICA
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ABNT
GUZUN, D. et al. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, v. 113, n. 15, p. 154304-1-154304-5, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4801891. Acesso em: 08 nov. 2025.
APA
Guzun, D., Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Tarasov, G. G., et al. (2013). Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, 113( 15), 154304-1-154304-5. doi:10.1063/1.4801891
NLM
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4801891
Vancouver
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4801891
Artigo de periodico
In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure (2012)
Teodoro, M. D.; Malachias, A.; Oliveira, V. Lopes; Cesar, D. F.; Richard, V. Lopez; Marques, G. E.; Marega Junior, Euclydes ; Benamara, M.; Mazur, Yu. I.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA
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ABNT
TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 08 nov. 2025.
APA
Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
NLM
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
Vancouver
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
Artigo de periodico
Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures (2012)
Mazur, Yu. I.; Dorogan, V. G.; Ware, M. E.; Marega Junior, Euclydes ; Lytvyn, P. M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, POLARIZAÇÃO
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ABNT
MAZUR, Yu. I. et al. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, v. 112, n. 8, p. 084314-1-084314-7, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4759318. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Lytvyn, P. M., Zhuchenko, Z. Y., et al. (2012). Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, 112( 8), 084314-1-084314-7. doi:10.1063/1.4759318
NLM
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
Vancouver
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4759318
Artigo de periodico
Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy (2012)
Ferri, F. A. ; Coelho, L. N.; Kunets, Vasyl P; Salamo, Gregory J. ; Marega Junior, Euclydes
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, FERROMAGNETISMO, FILMES FINOS
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ABNT
FERRI, F. A. et al. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, v. 112, n. 3, p. 034317-1-034317-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4745904. Acesso em: 08 nov. 2025.
APA
Ferri, F. A., Coelho, L. N., Kunets, V. P., Salamo, G. J., & Marega Junior, E. (2012). Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, 112( 3), 034317-1-034317-6. doi:10.1063/1.4745904
NLM
Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Junior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4745904
Vancouver
Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Junior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4745904
Artigo de periodico
Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions (2010)
Sergeenkov, S.; Rivera, V. A. G.; Marega Junior, Euclydes ; Moreira, F. M. Araújo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: SUPERCONDUTIVIDADE, ELETROMAGNETISMO, ELETRODINÂMICA, ELETRICIDADE E ELETRÔNICA
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ABNT
SERGEENKOV, S. et al. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, v. 107, n. 9, p. 096102-1-096102-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3407566. Acesso em: 08 nov. 2025.
APA
Sergeenkov, S., Rivera, V. A. G., Marega Junior, E., & Moreira, F. M. A. (2010). Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions. Journal of Applied Physics, 107( 9), 096102-1-096102-3. doi:10.1063/1.3407566
NLM
Sergeenkov S, Rivera VAG, Marega Junior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3407566
Vancouver
Sergeenkov S, Rivera VAG, Marega Junior E, Moreira FMA. Universal resistance capacitance crossover in current-voltage characteristics for unshunted array of overdamped Nb-Al'O IND.x'-Nb Josephson junctions [Internet]. Journal of Applied Physics. 2010 ; 107( 9): 096102-1-096102-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3407566
Artigo de periodico
Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa (2008)
Teodoro, M. D.; Dias, I. F. L.; Laureto, E.; Duarte, J. L.; Borrero, P. P. González; Lourenço, S. A.; Mazzaro, I.; Marega Junior, Euclydes ; Salamo, G. J.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, SEMICONDUTORES, GASES, TEMPERATURA
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ABNT
TEODORO, M. D. et al. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, v. 103, n. 9, p. 093508-1-093508-7, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2913513. Acesso em: 08 nov. 2025.
APA
Teodoro, M. D., Dias, I. F. L., Laureto, E., Duarte, J. L., Borrero, P. P. G., Lourenço, S. A., et al. (2008). Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, 103( 9), 093508-1-093508-7. doi:10.1063/1.2913513
NLM
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513
Vancouver
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513

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