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Filtros : "Journal of Applied Physics" "Comedi, D." Limpar

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  • Artigo de periodico

    The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters (2010)

    Borrero-González, L. J.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Wojcik, J.; Mascher, P.; Pusep, Yuri A ; Comedi, D.; Guimarães, Francisco Eduardo Gontijo

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)

    Acesso à fonteDOIHow to cite
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    • ABNT

      BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 09 nov. 2025.

    • APA

      Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900

    • NLM

      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3457900

    • Vancouver

      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3457900

  • Artigo de periodico

    High resolution x-ray diffraction analysis of InGaAs/InP superlattices (2006)

    Cornet, D. M.; LaPierre, R. R.; Comedi, D.; Pusep, Yuri A

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA

    Acesso à fonteDOIHow to cite
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    • ABNT

      CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 09 nov. 2025.

    • APA

      Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689

    • NLM

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2335689

    • Vancouver

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2335689
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