Filtros : "Journal of Applied Physics" " IFSC010" Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, NANOTECNOLOGIA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 08 nov. 2025.
    • APA

      Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
    • NLM

      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4869218
    • Vancouver

      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4869218
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS

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    • ABNT

      CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 08 nov. 2025.
    • APA

      Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
    • NLM

      Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
    • Vancouver

      Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4792301
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)

    Acesso à fonteDOIHow to cite
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    • ABNT

      BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 08 nov. 2025.
    • APA

      Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
    • NLM

      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900
    • Vancouver

      Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3457900

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