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MESSADDEQ, Sandra Helena et al. Photoinduced effect in Ga-Ge-S based thin films. Applied Surface Science, v. 252, n. 24, p. 8738-8744, 2006Tradução . . Acesso em: 09 nov. 2025.
APA
Messaddeq, S. H., Siu Li, M., Inoue, S., Ribeiro, S. J. L., & Messaddeq, Y. (2006). Photoinduced effect in Ga-Ge-S based thin films. Applied Surface Science, 252( 24), 8738-8744.
NLM
Messaddeq SH, Siu Li M, Inoue S, Ribeiro SJL, Messaddeq Y. Photoinduced effect in Ga-Ge-S based thin films. Applied Surface Science. 2006 ; 252( 24): 8738-8744.[citado 2025 nov. 09 ]
Vancouver
Messaddeq SH, Siu Li M, Inoue S, Ribeiro SJL, Messaddeq Y. Photoinduced effect in Ga-Ge-S based thin films. Applied Surface Science. 2006 ; 252( 24): 8738-8744.[citado 2025 nov. 09 ]
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MIOTTO, R et al. Thionin adsorption on silicon (100): structural analysis. Applied Surface Science, v. 253, n. 4, p. 1978-1982, 2006Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6THY-4JVSV81-8-21&_cdi=5295&_user=972067&_orig=browse&_coverDate=12%2F15%2F2006&_sk=997469995&view=c&wchp=dGLbVlb-zSkzV&md5=acc94b55ddd7242377aad57aa86d3b8d&ie=/sdarticle.pdf. Acesso em: 09 nov. 2025.
APA
Miotto, R., Cunha, J. F. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C., Ferraz, A. C., et al. (2006). Thionin adsorption on silicon (100): structural analysis. Applied Surface Science, 253( 4), 1978-1982. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6THY-4JVSV81-8-21&_cdi=5295&_user=972067&_orig=browse&_coverDate=12%2F15%2F2006&_sk=997469995&view=c&wchp=dGLbVlb-zSkzV&md5=acc94b55ddd7242377aad57aa86d3b8d&ie=/sdarticle.pdf
NLM
Miotto R, Cunha JFR, Silva SW da, Soler MAG, Morais PC, Ferraz AC, Tada DB, Petri DFS, Baptista M da S. Thionin adsorption on silicon (100): structural analysis [Internet]. Applied Surface Science. 2006 ; 253( 4): 1978-1982.[citado 2025 nov. 09 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6THY-4JVSV81-8-21&_cdi=5295&_user=972067&_orig=browse&_coverDate=12%2F15%2F2006&_sk=997469995&view=c&wchp=dGLbVlb-zSkzV&md5=acc94b55ddd7242377aad57aa86d3b8d&ie=/sdarticle.pdf
Vancouver
Miotto R, Cunha JFR, Silva SW da, Soler MAG, Morais PC, Ferraz AC, Tada DB, Petri DFS, Baptista M da S. Thionin adsorption on silicon (100): structural analysis [Internet]. Applied Surface Science. 2006 ; 253( 4): 1978-1982.[citado 2025 nov. 09 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6THY-4JVSV81-8-21&_cdi=5295&_user=972067&_orig=browse&_coverDate=12%2F15%2F2006&_sk=997469995&view=c&wchp=dGLbVlb-zSkzV&md5=acc94b55ddd7242377aad57aa86d3b8d&ie=/sdarticle.pdf
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
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NEVES, Rodrigo de Santis e DE ROBERTIS, Eveline e MOTHEO, Artur de Jesus. Capacitance dispersion in electrochemical impedance spectroscopy measurements of iodide adsorption on Au(1 1 1). Applied Surface Science, v. 253, n. 3, p. 1379-1386, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2006.02.010. Acesso em: 09 nov. 2025.
APA
Neves, R. de S., De Robertis, E., & Motheo, A. de J. (2006). Capacitance dispersion in electrochemical impedance spectroscopy measurements of iodide adsorption on Au(1 1 1). Applied Surface Science, 253( 3), 1379-1386. doi:10.1016/j.apsusc.2006.02.010
NLM
Neves R de S, De Robertis E, Motheo A de J. Capacitance dispersion in electrochemical impedance spectroscopy measurements of iodide adsorption on Au(1 1 1) [Internet]. Applied Surface Science. 2006 ; 253( 3): 1379-1386.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2006.02.010
Vancouver
Neves R de S, De Robertis E, Motheo A de J. Capacitance dispersion in electrochemical impedance spectroscopy measurements of iodide adsorption on Au(1 1 1) [Internet]. Applied Surface Science. 2006 ; 253( 3): 1379-1386.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2006.02.010
; Inoue, S.; Ribeiro, S. J. L.; Messaddeq, Younnes
