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Artigo de periodico
Structure evaluation of submicrometre silicon chips removed by diamond turning (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor Science and Technology. Unidade: EESC
Subjects: SEMICONDUTORES, MICROSCÓPIO ELETRÔNICO, DIAMANTE
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, v. 22, n. 5, p. 561-573, 2007Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/22/5/019. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, 22( 5), 561-573. doi:10.1088/0268-1242/22/5/019
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Artigo de periodico
Surface integrity of ultra-precision diamond turned 'TI' (commercially pure) and 'TI' alloy ('TI'-6'AL'-4V) (2007)
Colafemina, João Paulo; Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto
Source: Proceedings of the Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: USINAGEM, LIGAS NÃO FERROSAS, TITÂNIO, DIAMANTE, FERRAMENTAS
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ABNT
COLAFEMINA, João Paulo e JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto. Surface integrity of ultra-precision diamond turned 'TI' (commercially pure) and 'TI' alloy ('TI'-6'AL'-4V). Proceedings of the Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 221, n. B6, p. 999-1006, 2007Tradução . . Acesso em: 02 out. 2024.
APA
Colafemina, J. P., Jasinevicius, R. G., & Duduch, J. G. (2007). Surface integrity of ultra-precision diamond turned 'TI' (commercially pure) and 'TI' alloy ('TI'-6'AL'-4V). Proceedings of the Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 221( B6), 999-1006.
NLM
Colafemina JP, Jasinevicius RG, Duduch JG. Surface integrity of ultra-precision diamond turned 'TI' (commercially pure) and 'TI' alloy ('TI'-6'AL'-4V). Proceedings of the Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2007 ; 221( B6): 999-1006.[citado 2024 out. 02 ]
Vancouver
Colafemina JP, Jasinevicius RG, Duduch JG. Surface integrity of ultra-precision diamond turned 'TI' (commercially pure) and 'TI' alloy ('TI'-6'AL'-4V). Proceedings of the Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2007 ; 221( B6): 999-1006.[citado 2024 out. 02 ]
Artigo de periodico
On the ductile response dependence upon phase transformation in diamond turning of semiconductors (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Physica Status Solidi B : basic research. Unidade: EESC
Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
NLM
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Vancouver
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Parte de monografia/livro
Ductile machining and high pressure phase transformations of semiconductor crystals (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor machining at the micro-nano scale. Unidade: EESC
Subjects: USINAGEM, FERRAMENTAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Ductile machining and high pressure phase transformations of semiconductor crystals. Semiconductor machining at the micro-nano scale. Tradução . Kerala: Transworld Research Network, 2007. . . Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Ductile machining and high pressure phase transformations of semiconductor crystals. In Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network.
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 out. 02 ]
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 out. 02 ]
Artigo de periodico
Annealing treatment of amorphous silicon generated by single point diamond turning (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: SILICONE, DIAMANTE, RECOZIMENTO, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, v. 34, n. 7-8, p. 680-688, 2007Tradução . . Disponível em: https://doi.org/10.1007/s00170-006-0650-z. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, 34( 7-8), 680-688. doi:10.1007/s00170-006-0650-z
NLM
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Vancouver
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Artigo de periodico
In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Journal of the Brazilian Society of Mechanical Science and Engineering. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, RECOZIMENTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, v. 29, n. Ja/Mar. 2007, p. 49-54, 2007Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782007000100008. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, 29( Ja/Mar. 2007), 49-54. doi:10.1590/s1678-58782007000100008
NLM
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782007000100008
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782007000100008

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