Theoretical study of defect complexes related with antisities in GaAs (1998)
Fazzio, Adalberto 
; Janotti, A.; Mota, R.; Piquini, P
Fonte: Radiation Effects and Defect in Solids. Nome do evento: Symposium on Defect Dependent Processes in Insulators and Semiconductors. Unidade: IF
Assuntos: FÍSICA, FÍSICA NUCLEAR
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FAZZIO, Adalberto et al. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers. . Acesso em: 05 dez. 2025. , 1998APA
Fazzio, A., Janotti, A., Mota, R., & Piquini, P. (1998). Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers.NLM
Fazzio A, Janotti A, Mota R, Piquini P. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 65-70.[citado 2025 dez. 05 ]Vancouver
Fazzio A, Janotti A, Mota R, Piquini P. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 65-70.[citado 2025 dez. 05 ]
