Fraga, Mariana A; Pessoa, R S; Maciel, Homero S; Massi, M; Santos Filho, Sebastião Gomes dos 
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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FRAGA, Mariana A et al. Etching studies of post-annealed SiC films deposited by PECVD: influence of the oxygen concentration. 2007, Anais.. Pennington: The Electrochemical Society, 2007. Disponível em: https://doi.org/10.1149/1.2766893. Acesso em: 17 nov. 2025.APA
Fraga, M. A., Pessoa, R. S., Maciel, H. S., Massi, M., & Santos Filho, S. G. dos. (2007). Etching studies of post-annealed SiC films deposited by PECVD: influence of the oxygen concentration. In SBMicro 2007. Pennington: The Electrochemical Society. doi:10.1149/1.2766893NLM
Fraga MA, Pessoa RS, Maciel HS, Massi M, Santos Filho SG dos. Etching studies of post-annealed SiC films deposited by PECVD: influence of the oxygen concentration [Internet]. SBMicro 2007. 2007 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/1.2766893Vancouver
Fraga MA, Pessoa RS, Maciel HS, Massi M, Santos Filho SG dos. Etching studies of post-annealed SiC films deposited by PECVD: influence of the oxygen concentration [Internet]. SBMicro 2007. 2007 ;[citado 2025 nov. 17 ] Available from: https://doi.org/10.1149/1.2766893
