MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI' (1989)
Basmaji, Pierre; Ceschin, A. M.; Siu Li, Máximo 
; Hipólito, Oscar; Bernussi, A. A.; Iikawa, F.; Motisuke, P.
Source: Program and Abstracts. Conference titles: Conference on Superlattices, Quantum Wells, and Mbe Technology. Unidade: IFQSC
Assunto: MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre et al. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. 1989, Anais.. Brasília: Universidade de Brasilia, 1989. . Acesso em: 05 nov. 2025.APA
Basmaji, P., Ceschin, A. M., Siu Li, M., Hipólito, O., Bernussi, A. A., Iikawa, F., & Motisuke, P. (1989). MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. In Program and Abstracts. Brasília: Universidade de Brasilia.NLM
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Program and Abstracts. 1989 ;[citado 2025 nov. 05 ]Vancouver
Basmaji P, Ceschin AM, Siu Li M, Hipólito O, Bernussi AA, Iikawa F, Motisuke P. MBE growth and characterization of 'DELTA'-doping in 'GA''AS' and 'GA''AS' / 'SI'. Program and Abstracts. 1989 ;[citado 2025 nov. 05 ]
