Evidence for zero-differential resistance states in electronic bilayers (2011)
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assunto: MAGNETISMO
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ABNT
GUSEV, G M et al. Evidence for zero-differential resistance states in electronic bilayers. PHYSICAL REVIEW B, v. 83, n. ja2011, p. 041306, 2011Tradução . . Disponível em: https://doi.org/10.1103/physrevb.83.041306. Acesso em: 04 nov. 2025.APA
Gusev, G. M., Wiedmann, S., Raichev, O. E., Bakarov, A. K., & Portal, J. C. (2011). Evidence for zero-differential resistance states in electronic bilayers. PHYSICAL REVIEW B, 83( ja2011), 041306. doi:10.1103/physrevb.83.041306NLM
Gusev GM, Wiedmann S, Raichev OE, Bakarov AK, Portal JC. Evidence for zero-differential resistance states in electronic bilayers [Internet]. PHYSICAL REVIEW B. 2011 ;83( ja2011): 041306.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.83.041306Vancouver
Gusev GM, Wiedmann S, Raichev OE, Bakarov AK, Portal JC. Evidence for zero-differential resistance states in electronic bilayers [Internet]. PHYSICAL REVIEW B. 2011 ;83( ja2011): 041306.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.83.041306
