Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures (2017)
Source: Nanoscale Research Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FOTOCONDUTIVIDADE, SEMICONDUTORES, NANOPARTÍCULAS, POÇOS QUÂNTICOS
ABNT
KONDRATENKO, Serhiy V. et al. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures. Nanoscale Research Letters, v. 12, p. 183-1-183-7, 2017Tradução . . Disponível em: https://doi.org/10.1186/s11671-017-1954-7. Acesso em: 06 out. 2024.APA
Kondratenko, S. V., Iliash, S. A., Vakulenko, O. V., Mazur, Y. I., Benamara, M., Marega Júnior, E., & Salamo, G. J. (2017). Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures. Nanoscale Research Letters, 12, 183-1-183-7. doi:10.1186/s11671-017-1954-7NLM
Kondratenko SV, Iliash SA, Vakulenko OV, Mazur YI, Benamara M, Marega Júnior E, Salamo GJ. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures [Internet]. Nanoscale Research Letters. 2017 ; 12 183-1-183-7.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/s11671-017-1954-7Vancouver
Kondratenko SV, Iliash SA, Vakulenko OV, Mazur YI, Benamara M, Marega Júnior E, Salamo GJ. Photoconductivity relaxation mechanisms of InGaAs/GaAs quantum dot chain structures [Internet]. Nanoscale Research Letters. 2017 ; 12 183-1-183-7.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/s11671-017-1954-7