Theoretical study of the stability and electronic properties of a '(GaAs/Te/InAs)' interface (1998)
Source: Journal of Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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MIWA, R H e FERRAZ, A. C. Theoretical study of the stability and electronic properties of a '(GaAs/Te/InAs)' interface. Journal of Physics, v. 10, p. 5739-5748, 1998Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/10/26/003. Acesso em: 08 nov. 2025.APA
Miwa, R. H., & Ferraz, A. C. (1998). Theoretical study of the stability and electronic properties of a '(GaAs/Te/InAs)' interface. Journal of Physics, 10, 5739-5748. doi:10.1088/0953-8984/10/26/003NLM
Miwa RH, Ferraz AC. Theoretical study of the stability and electronic properties of a '(GaAs/Te/InAs)' interface [Internet]. Journal of Physics. 1998 ; 10 5739-5748.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1088/0953-8984/10/26/003Vancouver
Miwa RH, Ferraz AC. Theoretical study of the stability and electronic properties of a '(GaAs/Te/InAs)' interface [Internet]. Journal of Physics. 1998 ; 10 5739-5748.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1088/0953-8984/10/26/003
