Effects of heavy boron doping upon oxygen precipitation in czochralski silicon (1988)
Source: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
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ABNT
HAHN, S et al. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon. Journal of Applied Physics, v. 64, n. 9 , p. 4454-65, 1988Tradução . . Disponível em: https://doi.org/10.1063/1.341268. Acesso em: 08 nov. 2025.APA
Hahn, S., Ponce, F. A., Tiller, W. A., Stojanoff, V., Bulla, D. A. P., & Castro Junior, W. E. (1988). Effects of heavy boron doping upon oxygen precipitation in czochralski silicon. Journal of Applied Physics, 64( 9 ), 4454-65. doi:10.1063/1.341268NLM
Hahn S, Ponce FA, Tiller WA, Stojanoff V, Bulla DAP, Castro Junior WE. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon [Internet]. Journal of Applied Physics. 1988 ;64( 9 ): 4454-65.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.341268Vancouver
Hahn S, Ponce FA, Tiller WA, Stojanoff V, Bulla DAP, Castro Junior WE. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon [Internet]. Journal of Applied Physics. 1988 ;64( 9 ): 4454-65.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.341268
