Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy (1993)
Source: International Journal of Quantum Chemistry. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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SCOLFARO, L M R et al. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry, v. 27, n. suppl., p. 213-7, 1993Tradução . . Acesso em: 06 out. 2024.APA
Scolfaro, L. M. R., Pintanel, R., Fazzio, A., & Leite, J. R. (1993). Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry, 27( suppl.), 213-7.NLM
Scolfaro LMR, Pintanel R, Fazzio A, Leite JR. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry. 1993 ;27( suppl.): 213-7.[citado 2024 out. 06 ]Vancouver
Scolfaro LMR, Pintanel R, Fazzio A, Leite JR. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry. 1993 ;27( suppl.): 213-7.[citado 2024 out. 06 ]